20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas
نویسندگان
چکیده
منابع مشابه
Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.
Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling t...
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Since the observation of radiation in the Terahertz (THz) frequency range from photoconductive antennas exited by femtosecond (fs) laser pulses, considerable efforts have been made to understand the mechanism responsible for THz generation, and to develop applications in THz Time-Domain Spectroscopy (THz-TDS). In this paper, the calculation of THz radiation from biased photoconductive antenna i...
متن کاملDetection of up to 20 THz with a low-temperature-grown GaAs photoconductive antenna gated with 15 fs light pulses
The generation and detection of terahertz ~THz! radiation using ultrashort optical pulses has been intensively studied during the last decade. The pulse width of commercially available mode-locked Ti:sapphire lasers is approaching 10 fs. With such ultrashort pulses, a wider detection bandwidth is expected to be possible. Coherent detection of THz radiation based on a photoconductive ~PC! antenn...
متن کاملDesign and performance of a THz emission and detection setup based on a semi-insulating GaAs emitter
We have built a relatively simple, highly efficient, THz emission and detection system centered around a 15 fs Ti:sapphire laser. In the system, 200 mW of laser power is focused to a 120 mm diam spot between two silverpaint electrodes on the surface of a semi-insulating GaAs crystal, kept at a temperature near 300 K, biased with a 50 kHz, 6400 V square wave. Using rapid delay scanning and lock-...
متن کاملScanning tunneling microscopy and spectroscopy of semi-insulating GaAs
N. D. Jäger, Ph. Ebert, K. Urban, R. Krause-Rehberg, and E. R. Weber Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany Fachbereich Physik, Martin-Luther-Universität Halle, 06099 Halle, Germany Department of Materials Science, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 ~Received ...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2014
ISSN: 1094-4087
DOI: 10.1364/oe.22.026358